DSA00274979.pdf
by Hitachi Semiconductor
- 2SK3160 Silicon N Channel MOS FET High Speed Power Switching 1st. Edition February 1999 Features · · · Low on-resistance RDS = 130 m typ. High speed switching 4 V gate drive device can be driven
- Original
- Yes
- Unknown
- Transferred
- Find it at Findchips.com
