The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
Scans-00149848.pdf
Manufacturer
Not Available
Partial File Text
TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM1112-4 FEATURES: â HIGH POWER â BROAD BAND INTERNALLY MATCHED PldB = 36.5 dBm at 11.7 GHz to 12.7 GHz â HIGH
Datasheet Type
Scan
ECAD Model
Scans-00149848.pdf preview
Download Datasheet
User Tagged Keywords
TIM1112-4