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    DSA2IH00179125.pdf

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    • SIEMENS SIPMOS® Kleinsignal-Bauelemente MOS-Transistoren im Bereich 50 V ... 800 V und 40 mA ... 3800 mA. IGBT: 1200 V; 2500 mA 1 Allgemeines Technische Angaben Technical Information SIPMOS® Sm
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