DSA00261220.pdf
by Fujitsu
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FHX13X, FHX14X
GaAs FET & HEMT Chips
FEATURES
· · · · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 200µm Gold Gate Metallization for
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Original
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Unknown
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Unknown
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Unknown
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