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    DSA00261215.pdf

    • Fujitsu
    • FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability
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