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    DSA00261069.pdf by Fujitsu

    • FLL101ME L-Band Medium & High Power GaAs FETs FEATURES · · · · · High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: hadd=47% (Typ.) Proven Reliability Hermetically Seale
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