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    DSA00471228.pdf

    • Toshiba
    • GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collecto
    • Original
    • Part pricing, stock, data attributes from Findchips.com

    DSA00471228.pdf preview Download Datasheet

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