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    DSA2IH00176699.pdf

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    • General Description of Optoelectronic Devices 2-1 General Description of Optoelectronic Devices 2-1-1 Infrared Emitting Diode (LED) (1 ) Operating principle The infrared L E D utilizes the PN ju
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    6N137 on semiconductor Built-in Zero-cross Circuit, High Noise Resistanc Fermi level gp1s56 IS436 pc817 equivalent PC829 Series PC847 equivalent PC851 equivalent PC853 equivalent PC9017 pc922 application PC922 equivalent PC923 equivalent pc923 Integrated circuit Photocoupler Q 817 pic triac PT460 equivalent S11MD3 S202S02 application S216S02 Application circuit S216S02 Application note S26MD01 equivalent sharp PC101 photocoupler Sharp, PC817, 0.4 ST ZO 103 TRIAC TRIAC application note snubber s102s02 triac pic 138 triac zo 103 TRIAC ZO 103 MA triac ZO 109 triac zo 109 ma triac ZO 109 st ZO 103 TRIAC ZO 109 TRIAC

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