DSA00128710.pdf by Fujitsu

Partial File Text FHR02X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.0dB (Typ.)@f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg 0.25µm, Wg = 200µm Gold Gate Metallization for High Reli
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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FHR02X FHX02X fujitsu hemt GaAs FET chip GaAs FET HEMT Chips high power FET transistor s-parameters

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