DSA00128622.pdf by Fujitsu

Partial File Text FSX017X GaAs FET & HEMT Chips FEATURES · Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz · High Power Gain: G1dB=11dB(Typ.)@8.0GHz · Proven Reliability Drain DESCRIPTION Source The FSX
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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FSX017X fujitsu hemt GaAs FET HEMT Chips