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DSA00128601.pdf
Manufacturer
Fujitsu
Partial File Text
FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · High Gain: G1dB=14.5dB (Typ.) · High PAE: add=47% (Typ.) · Hermetic Metal/Ceramic (SMT) Package ·
Datasheet Type
Original
ECAD Model
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FLU10XM