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DSA00225264.pdf
by International Rectifier
Partial File Text
PD 9.1377 IRLI3103 PRELIMINARY HEXFET ® Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4
Datasheet Type
Original
RoHS
No
Pb Free
No
Lifecycle
Obsolete
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IRLI3103PBF
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