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    DSAEDA00091537.pdf

    • Efficient Power Conversion
    • EPC2016 eGaN® FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 16 mΩ ID , 11 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is gr
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    DSAEDA00091537.pdf preview Download Datasheet

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