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    DSAEDA00091535.pdf

    • Efficient Power Conversion
    • EPC2014 eGaN® FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 16 mΩ ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown
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    DSAEDA00091535.pdf preview Download Datasheet

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