DSA00224710.pdf by Mitsubishi

Partial File Text MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifi
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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