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DSA00224457.pdf
Manufacturer
International Rectifier
Partial File Text
PD - 9.1527 IRFI9520N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel
Datasheet Type
Original
ECAD Model
Part Details
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IRF9520N
IRFI9520N
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