DSAXX003142.pdf by HT Wang

Partial File Text SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m 80m Features Advanced trench process technology High Density Cell
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