DSAXX003136.pdf
by HT Wang
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PT4410
30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@12A = 10.5m
RDS(ON), Vgs@4.5V, Ids@12A = 15m
Features
Advanced trench process technology
High Density Cell Design For
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Original
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Unknown
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Unknown
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Unknown
