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    DSAXX002618.pdf by HT Wang

    • FDN335N 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100m Features Advanced trench process technology High Density Cell
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