DSA2IH00173727.pdf by Not Available

Partial File Text m SGS-THOMSON iy IRF720 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM · DIE SIZE: 110x110 mils · METALLIZATION: Top Al Back A u/C r/N i/A u · BACKSIDETHICKNESS: 6100
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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