DSA2IH00173721.pdf by Not Available

Partial File Text SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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