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    DSAXX0017136.pdf

    • Cree
    • CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features · · · · · · = 1200 V RDS(on) Qg = 80 m = 90.8 nC Package D D Indu
    • Original
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    DSAXX0017136.pdf preview Download Datasheet

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    bare Die mosfet C2D10120D CMF20120D CPMF-1200-S080B Cree SiC diode die Cree SiC MOSFET D-MOSFET DMOS SiC DMOSFET gate drive pulse transformer Gate Drive Characteristics Requirements MOSFET 20a 800v MOSFET 800V 10A S080b
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