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    • SAMSUNG SEMICONDUCTOR INC -14E D I.7UH112 aG077SG 1 I PNP EPITAXIAL " TIP145F/146F/147F SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAltf* MIN hFE=1000 @ Vce = -4V, lc = -5A MONOLITHIC CONSTRU
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    TIP145F TIP146F TIP1477 TIP147F TIP147T
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