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Scans-00142991.pdf
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SAMSUNG ELECTRONICS INC bME D â TTbHlHE DD1SSSM Ãü1 IRF9530/9531Z9532/9533 P-CHANNEL IRFP9130/9131/9132/9133 POWER MOSFETS ! FEATURES ⢠Lower Rds (on) ⢠Improved inductive ruggedness â
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IRF9530
IRF9530 mosfet
IRF9530* p-channel power MOSFET
IRF9531
IRF9532
L 9132
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