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    • - 7964 142 SAMSUNG SEMICONDUÇTOR^INÇ ífl DE^ 7^4142 OGOSin fc, I ......-- IRF340/341/342/343 98D O 51 1 9.__D T-3f~/3 N-CHANNEL POWER MOSFETS FEATURES • LowRDS(on) • Improved inductive
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