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DSAHI000132117.pdf
Manufacturer
Toshiba
Partial File Text
TC58NVM9S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electr
Datasheet Type
Original
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User Tagged Keywords
P-TFBGA63
TC58NVM9S3
TC58NVM9S3EBAI4
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