DSAHI000132114.pdf by Toshiba

Partial File Text TC58DYG02D5BAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58DYG02D5 is a single 1.8V 1Gbit (1,107,296,256bits) NAND Electri
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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TC58DVG02D5TA00 TC58DYG02D5BAI4