DSASW00375019.pdf
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STMicroelectronics
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(V)
500
600
600
700
700
(V)
800
800
800
800
800
800
800
800
800
dV/dt
VCL @ 100
(di/dt)c
IGT max (4)
µA (1)
@ Tj = 125 °C @ Tj = 125 °C
(V)
(mA)
(A/ms)
(V/µs)
850
10
0.
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Original
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