DSA00238211.pdf by Fairchild Semiconductor

Partial File Text FDB031N08 N-Channel PowerTrench® MOSFET May 2008 FDB031N08 N-Channel Features · RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A · Fast switching speed · Low gate charge · High performance trench
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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