DSASW00373742.pdf

Partial File Text Charge-Gain Program Disturb Mechanism in Split-Gate Flash Memory Cell V. Markov, K. Korablev, A. Kotov, X. Liu, Y.B. Jia, T.N. Dang, and A. Levi Silicon Storage Technology, Inc. 1171 Sonora Court,
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markov NAND read disturb sl 100 sem split-gate flash vlsi tech