DSAIH00083977.pdf by Cree

Partial File Text CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Creeâs CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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