DSAIH00083937.pdf by Cree

Partial File Text CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Creeâs CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, hi
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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