DSA00237244.pdf by Fairchild Semiconductor

Partial File Text FJP9100 FJP9100 High Voltage Power Darlington Transistor · Built-in Resistor at Base-Emitter : R1(Typ.)=2000 · Built-in Resistor at Base : RB(Typ.)=700 ± 100 1 1.Base TO-220 2.Collector 3.E
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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