DSAIH00083691.pdf by Cree

Partial File Text PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Creeâs CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficienc
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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