DSA00299952.pdf by Central Semiconductor

Partial File Text PROCESS CP630 Power Transistor PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Obsolete
Price & Stock
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Equivalent Parts !
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

KSH127TM MJD127TF MJD127 KSH127TF MJD127G

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"Darlington Transistor" CJD127 CP630 CZT127