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    • SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2.7 00.45 LD 242 Chip position CO i - ; Q O 3.6 " 3.0 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. we
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