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    • I 2) 3) High-current gain Medium Power Transistor (20V, 0.5A) ·E xternal dimensions (Units: mm) 2SD2114K 2.9±0.2 1.1 2SD2114K/2SD2144S hFE = 1200 (Typ) High emitter-base voltage, Vebo = 12V
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