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    DSA0025282.pdf

    • Freescale Semiconductor
    • Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS
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    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
      MRFG35010MT1 MRFG35010NT1
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