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    DSA0023922.pdf

    • Hitachi Semiconductor
    • 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A (Z) 3rd. Edition Jun 1998 Features · Low on-resistance R DS(on) = 10m typ. · 4V gate drive devices. · High speed s
    • Original

    DSA0023922.pdf preview Download Datasheet

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    2SK3081

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