DSA0023920.pdf by Hitachi Semiconductor

Partial File Text 2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features · Low on-resistance R DS(on) = 20 m typ. (V GS = 10V, ID = 15 A) · 4V gate drive
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Transferred
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