DSAZSAA00030915.pdf by International Rectifier

Partial File Text IRG7PG35UPbF IRG7PG35U-EPbF Â INSULATED GATE BIPOLAR TRANSISTOR Â Features ï·ï Low VCE (ON) trench IGBT technology ï·ï Low switching losses ï·ï Square RBSOA ï·ï 100% of th
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