DSA0023833.pdf by Hitachi Semiconductor

Partial File Text 2SK2736 Silicon N Channel DVL MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features · Low on-resistance R DS(on) = 20 m typ. (VGS = 10V, ID = 15 A) · 4V gate drive devices.
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2SK2684 2SK2736