DSA0097743.pdf by Infineon Technologies

Partial File Text IPB123N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal level 100 12.3
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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123N10N IEC61249-2-21

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