DSAIH00060389.pdf by Kodenshi AUK

Partial File Text STJ009 P-ch Trench MOSFET Portable Equipment Application Features ï Low drain-source On-resistance: RDS(on)=72mâ¦ (Max.) @VGS=-10V, ID=-2.7A ï Low gate charge: Qg=4.7nC (Typ.) ï High p
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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