DSA00600813.pdf by Renesas Technology

Partial File Text RJL6014DPP Silicon N Channel MOS FET High Speed Power Switching Features · Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 °C) · Low on-resistance R
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