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    DSAZIHA100060374.pdf by American Microsemiconductor

    • GDM21030 Thyristors Center Tapped GTO Module with Common Anode V(DRM) Max. (V)1k V(RRM) Max. (V)1k I(T) Rated Maximum (A)60± @Temp. (øC) (Test Condition) I(TSM) Max. (A)1.2k @ t(w) (s) (Test
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