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    DSA00207230.pdf

    • Eudyna Devices
    • FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg 0.15µm, Wg = 200µm Gold Gate Metallization for H
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    DSA00207230.pdf preview Download Datasheet

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    eudyna GaAs FET RF Transistor

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