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    • N-CHANNEL ENHANCEMENT DMOS FET CHIP NUMBER (0.508mm) Di* Sin: 20 1 20 (mib) 0.506 x 0.506(mm) 4x4 (mil>) Pad Sin: 0.102 i 0.102(imn) BODY-SUBSTRATE CONTACT METALL1ZATION Top Contact: > 12,000 A Alumi
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