DSA00207113.pdf by Eudyna Devices

Partial File Text FSU01LG General Purpose GaAs FET FEATURES · High Output Power: P1dB = 20.0dBm (Typ.) · High Associated Gain: G1dB = 19.0dB (Typ.) · Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz · Low Bias Conditions: V
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