DSAZIHA100060051.pdf
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American Microsemiconductor
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350PJT1200 Thyristors
Gate Turn Off Thyristor (GTO)
V(DRM) Max. (V)1.2k
V(RRM) Max. (V)
I(T) Rated Maximum (A)350±
@Temp. (øC) (Test Condition)80#
I(TSM) Max. (A)
@ t(w) (s) (Test Condition)
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Original
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